发明名称 |
ETCHING NARROW, TALL DIELECTRIC ISOLATION STRUCTURES FROM A DIELECTRIC LAYER |
摘要 |
Methods of forming isolation structures are disclosed. A method of forming isolation structures for an image sensor array of one aspect may include forming a dielectric layer over a semiconductor substrate. Narrow, tall dielectric isolation structures may be formed from the dielectric layer. The narrow, tall dielectric isolation structures may have a width that is no more than 0.3 micrometers and a height that is at least 1.5 micrometers. A semiconductor material may be epitaxially grown around the narrow, tall dielectric isolation structures. Other methods and apparatus are also disclosed.
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申请公布号 |
US2012319230(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201113164619 |
申请日期 |
2011.06.20 |
申请人 |
LIU CHIA-YING;KU KEH-CHIANG;YANG WU-ZHANG |
发明人 |
LIU CHIA-YING;KU KEH-CHIANG;YANG WU-ZHANG |
分类号 |
H01L21/762;B82Y40/00;H01L27/04 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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