| 摘要 |
The invention relates to a method for bonding two substrates by applying an activation treatment to at least one of the substrates, and performing the contacting step of the two substrates under partial vacuum. Due to the combination of the two steps, it is possible to carry out the bonding and obtain high bonding energy with a reduced number of bonding voids. The invention is in particular applicable to a substrate of processed or at least partially processed devices.
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