| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide stable electrical characteristics to a semiconductor device using an oxide semiconductor to achieve high reliability. <P>SOLUTION: A manufacturing process of a bottom gate structure transistor having an oxide semiconductor film comprises performing dehydration by heat treatment or a dehydrogenation treatment, and oxygen dope processing. A transistor having a gate insulation film on which the oxygen dope processing is performed, and an oxide semiconductor film on which dehydration by heat treatment or dehydrogenation treatment is performed can reduce an amount of change of a threshold voltage of the transistor even before and after a bias-thermal stress test (BT test), and can be highly reliable. <P>COPYRIGHT: (C)2013,JPO&INPIT |
