| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit comprising a transfer transistor with high charge transfer efficiency. <P>SOLUTION: A semiconductor integrated circuit according to an embodiment comprises: a transfer transistor including a gate electrode, the gate electrode and one diffusion layer being diode-connected via first wiring; and a clock signal line to which a clock signal is supplied. At least a part of a first partial clock signal line, which is a part of the clock signal line, is formed on the gate electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
