发明名称 GATE CONTROL CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To ensure and facilitate overvoltage suppression gate control for suppressing heating of a switching element, and ensure and facilitate oscillation prevention and distributed voltage balance control in a semiconductor switch circuit comprising a plurality of switching elements connected in series. <P>SOLUTION: Independently of a main gate current to an IGBT 1 applied through a gate resistance A by a gate drive circuit 2, a voltage-compensated gate control circuit 3-6 injects a voltage-compensated gate current via a gate resistance B when a collector-emitter voltage Vce of the IGBT 1 exceeds a threshold value, and stops injecting the voltage-compensated gate current when the voltage Vce falls below the threshold value. The gate resistance B is set to a lower resistance value than that of the gate resistance A. After the injection of the voltage-compensated gate current, a charge amount substantially equivalent to the injection amount of the gate current is drawn from the IGBT 1 as a gate current. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012253488(A) 申请公布日期 2012.12.20
申请号 JP20110123314 申请日期 2011.06.01
申请人 MEIDENSHA CORP 发明人
分类号 H03K17/10;H02M1/08;H03K17/08 主分类号 H03K17/10
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