| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus that can reduce a variation in distribution of in-plane film thicknesses of substrates disposed on a cart. <P>SOLUTION: The film deposition apparatus of a plasma chemical vapor deposition system includes the cart with a rectangular mounting surface on which a plurality of substrates to be subjected to film deposition processing are arranged in arrays. The roughness of a surface in a certain range from each apex of four corners of the mounting surface is greater than that of a surface in the other range of the mounting surface. <P>COPYRIGHT: (C)2013,JPO&INPIT |
