发明名称 SPUTTERING TARGET FOR SOLAR CELL
摘要 <P>PROBLEM TO BE SOLVED: To provide a sputtering target for a solar cell, which shows a high sputtering rate at an early stage of sputtering, shows little deterioration of the sputtering rate over time and is capable of forming a homogeneous film. <P>SOLUTION: The sputtering target for a solar cell is formed by joining a target material and a backing plate by a bonding material made of an indium-tin alloy or an indium-gallium alloy. The target material is obtained by: applying a physical stress to an indium ingot; and reducing the thickness of the ingot to 70% or less of its original thickness. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012251174(A) 申请公布日期 2012.12.20
申请号 JP20110091415 申请日期 2011.04.15
申请人 MITSUI MINING & SMELTING CO LTD 发明人
分类号 C23C14/34;B23K35/26;C22C13/00;C22C28/00;C22F1/00;C22F1/16 主分类号 C23C14/34
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