发明名称 |
BI-FET CASCODE POWER SWITCH |
摘要 |
Power switch devices for high-speed applications are disclosed. The power switch device includes a depletion mode field effect transistor (D-FET), an enhancement mode field effect transistor (E-FET) and a bipolar transistor. In one embodiment, the E-FET is coupled in cascode with the D-FET such that turning off the E-FET turns off the D-FET and turning on the E-FET turns on the D-FET. Furthermore, the bipolar transistor is operably associated with the D-FET and the E-FET such that turning on the bipolar transistor drives current from the D-FET through the bipolar transistor to the E-FET to provide a charge that turns on the E-FET. The bipolar transistor provides several advantages such as a higher Schottky breakdown voltage for the E-FET and faster current switching speed for the power switch device.
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申请公布号 |
US2012319758(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213525927 |
申请日期 |
2012.06.18 |
申请人 |
KOBAYASHI KEVIN W.;JOHNSON JOSEPH;RF MICRO DEVICES, INC. |
发明人 |
KOBAYASHI KEVIN W.;JOHNSON JOSEPH |
分类号 |
H03K17/567 |
主分类号 |
H03K17/567 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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