| 摘要 |
A seed crystal production method for casting quasi-monocrystalline silicon ingots utilizes monocrystalline silicon of orientation <100>, having a resistivity of =0.1O°cm and any polarity. The manufacturing process follows the following order: a. selecting a cylinder of monocrystalline silicon having a diameter of 130 to 250 mm; b. making a reverse cut of 50 to 350 mm at the cut off edge; c. forming a monocrystalline silicon into a square rod with a squaring machine; d. polishing the square rod on four sides with a flat grinding machine; e. cutting the monocrystalline silicon into crystal blocks with a cutting machine, each block having a height of 5 to 50 mm; f. polishing the crystal blocks by chemical or mechanical means to remove a surface damage layer; cleaning, drying, packaging, and storing the crystal blocks for use. Control by the method effectively reduces flaws caused by the seed crystal, thereby improving the quality of quasi-monocrystalline crystal grown in an ingot furnace. |
