METHOD FOR DRIVING RESISTANCE CHANGING ELEMENT, AND NONVOLATILE STORAGE DEVICE

摘要

Provided are a method for driving a resistance changing element whereby stable operation can be achieved, and a nonvolatile storage device. In a low resistance-inducing process, a low resistance-inducing voltage pulse of negative polarity is applied one time to a resistance changing layer (3) furnished to a resistance changing element (10), whereas in a high resistance-inducing process, a high resistance-inducing voltage pulse of positive polarity is applied two or more times in an analogous manner to the resistance changing layer (3). Where the voltage value of one of these high resistance-inducing voltage pulses is denoted as VH1, and the voltage value of a subsequently applied high resistance-inducing voltage pulse is denoted as VH2, the relationship VH1 > VH2 is established.