METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER AND NITRIDE SEMICONDUCTOR CRYSTAL LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor crystal layer with further high quality and to provide the nitride semiconductor crystal layer.

SOLUTION: A nitride semiconductor crystal layer having a thickness of 1 μm or more is formed on a silicon crystal layer having a thickness of 20 μm or less provided on a substrate of which a silicon oxide film is formed on the surface. After a first portion of the nitride semiconductor crystal layer is formed on the silicon crystal layer, a second portion is formed at a higher temperature than the first portion. The silicon crystal layer is divided into island-shaped layers having a characteristic length of 0.5 mm or more to 10 mm or less in a surface parallel to the layer surface of the silicon crystal layer. A plurality of nitride semiconductor crystal layers separated from each other are selectively formed on each of the divided silicon crystal layers. The thickness of the silicon crystal layer is reduced by making at least a portion of the silicon crystal layer incorporated into the nitride semiconductor crystal layer.

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