| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of relaxing a stress to the entire semiconductor device and securing flexibility in design of the device due to the unnecessity of a special configuration for controlling the stress. <P>SOLUTION: By separating an insulating portion 5 formed so as to secure insulation between a silicon substrate 2 and a metal wiring layer formed above the silicon substrate 2 into two layers (a first insulating portion 5a and a second insulating portion 5b), and causing a part of the two layers to apply a residual stress which is reverse of a residual stress generated in another film formation step in a semiconductor device 1, a residual stress applied to the entire semiconductor device is reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
