发明名称 |
METHOD FOR CALCULATING PARAMETER VALUES OF THIN-FILM TRANSISTOR AND APPARATUS FOR PERFORMING THE METHOD |
摘要 |
A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.
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申请公布号 |
US2012323542(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213481579 |
申请日期 |
2012.05.25 |
申请人 |
LEE JE-HUN;AHN BYUNG-DU;PARK SEI-YONG;PARK JUN-HYUN;PARK JAE-WOO;KIM DAE-HWAN;KIM SUNG-CHUL;JEON YONG-WOO;SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE JE-HUN;AHN BYUNG-DU;PARK SEI-YONG;PARK JUN-HYUN;PARK JAE-WOO;KIM DAE-HWAN;KIM SUNG-CHUL;JEON YONG-WOO |
分类号 |
G06G7/62 |
主分类号 |
G06G7/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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