发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR ERASING DATA THEREOF |
摘要 |
A control circuit is configured to set a drain-side select transistor and a source-side select transistor connected to a selected memory string to non-conductive states. The control circuit is configured to apply a first voltage to a non-selected word line connected to a gate of a non-selected memory cell in the selected memory string. The control circuit is configured to apply a second voltage to a selected word line connected to a gate of a selected memory cell in the selected memory string. The second voltage is smaller than the first voltage in an erasing operation. |
申请公布号 |
US2012320698(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213493370 |
申请日期 |
2012.06.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITAGAKI KIYOTARO;YAMADA KUNIHIRO;IWATA YOSHIHISA |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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