发明名称 |
JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING POWER SUPPLY, AND SWITCHING POWER SUPPLY |
摘要 |
A switching power supply has a start-up circuit that includes a field effect transistor (JFET), which has a gate region (a p-type well region) formed in a surface layer of a p-type substrate and a drift region (a first n-type well region). A plurality of source regions (second n-type well regions) are formed circumferentially around the drift region. A drain region (a third n-type well region) is formed centrally of the source region. The drain region and the source regions can be formed at the same time. A metal wiring of the source electrode wiring connected to source regions is divided into at least two groups to form at least two junction field effect transistors. |
申请公布号 |
US2012319177(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213594985 |
申请日期 |
2012.08.27 |
申请人 |
SAITO MASARU;SONOBE KOJI;FUJI ELECTRIC CO., LTD. |
发明人 |
SAITO MASARU;SONOBE KOJI |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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