| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a current detection element from being damaged at the time of applying a reverse bias and to prevent the element from being damaged when an excessive current flows therethrough. <P>SOLUTION: A resistor for current detection is connected between a source electrode 25 of a main element 24 and a current-sensing electrode 22 of a current detection element 21. Dielectric strength of a gate insulating film 36 is larger than the product of the maximum current that can flow through the current detection element 21 at the time of reverse bias and the resistor. The diffusion depth of a p-body region 32 of the main element 24 is shallower than that of a p-body region 31 of the current detection element 21, and the curvature of an end portion of the p-body region 32 of the main element 24 is smaller than that of an end portion of the p-body region 31 of the current detection element 21. Consequently, the electric field at the end portion of the p-body region 32 of the main element 24 is higher than that at the end portion of the p-body region 31 of the current detection element 21 at the time of applying a reverse bias, so that avalanche breakdown easily causes earlier in the main element 24 than in the current detection element 21. <P>COPYRIGHT: (C)2013,JPO&INPIT |
