发明名称 ETCHING SOLUTION FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN
摘要 Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.
申请公布号 US2012319033(A1) 申请公布日期 2012.12.20
申请号 US201113578696 申请日期 2011.02.15
申请人 OKABE SATOSHI;NARITA KAZUYO;MATSUBARA MASAHIDE;ADANIYA TOMOYUKI;MARUYAMA TAKETO;MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 OKABE SATOSHI;NARITA KAZUYO;MATSUBARA MASAHIDE;ADANIYA TOMOYUKI;MARUYAMA TAKETO
分类号 C23F1/10 主分类号 C23F1/10
代理机构 代理人
主权项
地址
您可能感兴趣的专利