| 摘要 |
A method of manufacturing a nitride semiconductor device includes: forming a high-resistance buffer layer made of a nitride semiconductor having a carbon concentration of at least 1018 cm−3 on a semiconductor substrate by MOCVD, using an organic metal compound as a group III source material and using a hydrazine derivative as a group V source material; and forming a nitride semiconductor layer having a resistance lower than the high-resistance buffer layer on the high-resistance buffer layer.
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