| 摘要 |
A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate. |
