METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device which comprises a MOS transistor that is reduced in variation in the characteristics due to channeling and that is also reduced in asymmetry due to shadowing. This method for manufacturing a semiconductor device that comprises a plurality of transistors on a wafer (302), which has a notch (301), in directions that are parallel or perpendicular to the notch direction that connects the center of the wafer (302) and the notch (301) comprises: a step of preparing the wafer (302) that has a main surface having an off angle of 2-2.8° (inclusive) from the (100) plane in a direction that has a twist angle of 12.5-32.5° (inclusive) with respect to the notch direction; and a step of implanting an impurity in a direction that is perpendicular to the main surface of the wafer (302).