SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A method for manufacturing a semiconductor device comprises the steps of: (D) forming an electroconductive film (9) containing a first metal on an oxide semiconductor layer (7) containing a second metal and forming a reactive layer (15) containing the first metal and the second metal on the bordering surfaces of the electroconductive film (9) and the oxide semiconductor layer (7); and (E) removing the portions in the electroconductive film (9) and the reactive layer (15) that are positioned over an area (7c) of the oxide semiconductor layer (7) that constitutes a channel area; step (E) comprising the steps of: (E1) performing dry etching on the electroconductive film (9) and the reactive layer (15) under conditions such that a residue containing the first metal remains on the channel area (7c); and (E2) removing at least some of the residue remaining on the channel area (7c) by wet etching after step (E1).