DISPLAY DEVICE, THIN-FILM TRANSISTOR USED IN DISPLAY DEVICE, AND METHOD FOR PRODUCING THIN-FILM TRANSISTOR

摘要

A thin-film transistor used in a display device is provided with: a gate electrode formed on an insulating supporting substrate; a gate-insulating film formed on the supporting substrate so as to cover the gate electrode; a semiconductor layer comprising a first semiconductor layer and a second semiconductor layer and formed on the gate-insulating film; an ohmic contact layer formed on the semiconductor layer; and a source electrode and a drain electrode that are formed so as to be separated from one another on the ohmic contact layer. Therein, an etching stopper comprising spin-on-glass (SOG) is provided in the channel-forming region of the semiconductor layer.