摘要 |
<p>PURPOSE: A three dimensional integrated microelectronic assembly with a stress reducing wire and a manufacturing method thereof are provided to protect an IC chip inside a handler using a compliant dielectric material. CONSTITUTION: A microelectronic assembly comprises a first microelectronic element and a second microelectronic element. The first microelectronic element comprises a substrate, a first semiconductor device(26), and conductive pads on a first surface. The second microelectronic element comprises a handler(10), a second semiconductor device(66), and the conductive pads on the first surface The first microelectronic element and the second microelectronic element are integrated so that second surfaces face. The conductive elements of the first microelectronic element are connected electrically to the conductive element of the second microelectronic element.</p> |