| 摘要 |
MULTI-LAYER N-TYPE STACK FOR CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING 5 Thin film photovoltaic devices (10) are provided that generally include a transparent conductive oxide layer (14) on the glass, a multi-layer n-type stack (16) on the transparent conductive oxide layer (14), and an absorber layer (e.g., a cadmium telluride layer) on the multi-layer n-type stack (14). The multi-layer n-type stack (16) generally includes a first layer (17) (e.g., a cadmium sulfide layer) and a second layer 10 (18) (e.g., a mixed phase layer). The multi-layer n-type stack (16) can, in certain embodiments, include additional layers (e.g., a third layer (19), a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices (10). Fig. 3 9- 20 Fig. 4 |
