发明名称 METHOD FOR PRODUCING FREE-STANDING SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a free-standing substrate, with which a free-standing substrate is produced without occurrence of warping and cracking. <P>SOLUTION: There is provided the method for producing a free-standing substrate, which includes: a first step of growing a first thin film on a heterogeneous substrate; a second step of forming an ion implantation layer in the first thin film by implanting ions into the first thin film; a third step of dividing the first thin film into an upper thin film and a lower thin film with the ion implantation layer as a reference; and a fourth step of growing a second thin film on the upper thin film. The production method has an effect of producing the free-standing substrate without occurrence of warping and cracking, and requiring no additional processes, such as a laser separation process, for separating the grown free-standing substrate from the heterogeneous substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012250907(A) 申请公布日期 2012.12.20
申请号 JP20120124445 申请日期 2012.05.31
申请人 SAMSUNG CORNING PRECISION MATERIALS CO LTD 发明人 CHOI JUNSUNG;PARK HYUN JONG;PARK CHEOLMIN;BAE JUNYOUNG;SHIN SEONGHWAN;LEE DONGWOOK;LEE WONJO;HAN YOUSHIN
分类号 C30B29/38;C30B25/02;H01L33/32 主分类号 C30B29/38
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