发明名称 |
BACK-SURFACE ELECTRODE FOR COMPOUND SEMICONDUCTOR THIN-FILM SOLAR BATTERY, SOLAR BATTERY, AND SPUTTERING TARGET FOR MANUFACTURING THE BACK-SURFACE ELECTRODE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel material which has a low electric resistance even after a high-heat history of approximately 450 to 500°C and is appropriate for a back-surface electrode for a compound semiconductor thin-film solar battery excellent in adhesion property with a substrate. <P>SOLUTION: There is provided a back-surface electrode used in a solar battery including a light absorption layer formed of a compound semiconductor thin film on a substrate. The back-surface electrode has a configuration in which a Cu alloy and Mo are stacked in this order from the substrate side. The Cu alloy should preferably contain 0.5-10 atom% of Al and/or 1.0-10 atom% of Ti. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012253158(A) |
申请公布日期 |
2012.12.20 |
申请号 |
JP20110123776 |
申请日期 |
2011.06.01 |
申请人 |
KOBE STEEL LTD |
发明人 |
FUJII HIDEO;FUKU KATSUFUMI |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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