| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a hierarchical DRAM with a small-scale circuit. <P>SOLUTION: A semiconductor device comprises: multiple subarrays that individually include multiple memory cells, a bit line connected to the memory cells and a pre-charge circuit for pre-charging the bit line, and are arranged in a matrix state in row and column directions; a column selection signal line that extends along the column direction and selects each column of the subarrays; a main word line that extends along the row direction and selects each row of the subarrays; and a pre-charge signal line that supplies a pre-charge signal to the pre-charge circuit. In the semiconductor device, at least two subarrays placed side by side in the row or column direction are controlled with identical logic in accordance with the pre-charge signal. <P>COPYRIGHT: (C)2013,JPO&INPIT |
