发明名称 |
MULTI-BIT MEMORY ELEMENTS, MEMORY DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE SAME |
摘要 |
In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer. |
申请公布号 |
US2012319076(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213483578 |
申请日期 |
2012.05.30 |
申请人 |
LEE CHANG-BUM;KIM CHANG-JUNG;KIM YOUNG-BAE;LEE MYOUNG-JAE;LEE DONG-SOO;CHANG MAN;LEE SEUNG-RYUL;KIM KYUNG-MIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-BUM;KIM CHANG-JUNG;KIM YOUNG-BAE;LEE MYOUNG-JAE;LEE DONG-SOO;CHANG MAN;LEE SEUNG-RYUL;KIM KYUNG-MIN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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