THIN FILM TRANSISTOR PANEL AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a thin film transistor panel, comprising a substrate, an insulation layer and transparent conducting material. The insulation layer comprises projections at the back side not facing the substrate. A space between two adjacent projections is 1 μm-10 μm; the transparent conducting material is formed on the top surface and the lateral surface of the projections of the insulation layer. Otherwise, the transparent conducting material is formed on the top surface and the plane surface around the bottom of the projections or formed on the top surface, the lateral surface and the plane surface around the bottom of the projections. The present invention also discloses a manufacturing method of the thin film transistor panel.