APPARATUS AND METHOD FOR PRODUCING SIC SINGLE CRYSTAL

摘要

The purpose of the present invention is to provide an apparatus for producing an SiC single crystal, said apparatus being capable of efficiently cooling a seed crystal that is attached to a seed shaft. This apparatus for producing an SiC single crystal is provided with: a crucible (14) in which an Si-C solution (16) is contained; and a seed shaft (30) that has a lower end surface (34) onto which an SiC seed crystal (36) is attached. The seed shaft comprises: an inner tube (48) that extends in the height direction of the crucible and constitutes a first channel (60) inside; an outer tube (50) that contains the inner tube and constitutes a second channel (SP1) between itself and the inner tube; and a bottom part that has the lower end surface and covers the lower end opening of the outer tube. One of the first channel and the second channel serves as a feed channel in which a cooling gas flows downward, and the other channel serves as a discharge channel in which the cooling gas flows upward. When viewed from the axial direction of the seed shaft, not less than 60% of the region of the SiC seed crystal overlaps the region inside the tube that constitutes the feed channel.