发明名称 DISPLAY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a light-emitting display device capable of improving an opening ratio in pixels including thin film transistors using oxide semiconductors. <P>SOLUTION: The light-emitting display device has a plurality of pixels each having a thin-film transistor and a light-emitting element. Each pixel is electrically connected to a first wiring that functions as a scanning line. The thin-film transistor has an oxide semiconductor layer that is provided on the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is provided to extend off the region where the first wiring is provided, with the light-emitting element being superimposed on the oxide semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012252348(A) 申请公布日期 2012.12.20
申请号 JP20120165507 申请日期 2012.07.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ARASAWA AKIRA;SHISHIDO HIDEAKI
分类号 G09F9/30;H01L21/336;H01L27/32;H01L29/786;H01L51/50 主分类号 G09F9/30
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