发明名称 |
NON-VOLATILE MEMORY DEVICE AND METHOD FOR CONTROLLING DUMMY WORD LINE VOLTAGE ACCORDING TO LOCATION OF SELECTED WORD LINE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile memory device. <P>SOLUTION: The nonvolatile memory device comprises: an array of memory cells including main memory cells connected to many word lines and dummy cells connected to at least one dummy word line; and an access circuit for receiving addresses and commands and controlling voltage of the one dummy word line by changing the voltage depending on whether a word line selected from the many word lines on the basis of the addresses is adjacent to the one dummy word line. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2012252775(A) |
申请公布日期 |
2012.12.20 |
申请号 |
JP20120126809 |
申请日期 |
2012.06.04 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JOO SANG-HYUN;SAI KIKAN;KIM MOO-SUNG |
分类号 |
G11C16/02;G11C16/04;G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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