发明名称 NON-VOLATILE MEMORY DEVICE AND METHOD FOR CONTROLLING DUMMY WORD LINE VOLTAGE ACCORDING TO LOCATION OF SELECTED WORD LINE
摘要 <P>PROBLEM TO BE SOLVED: To provide a non-volatile memory device. <P>SOLUTION: The nonvolatile memory device comprises: an array of memory cells including main memory cells connected to many word lines and dummy cells connected to at least one dummy word line; and an access circuit for receiving addresses and commands and controlling voltage of the one dummy word line by changing the voltage depending on whether a word line selected from the many word lines on the basis of the addresses is adjacent to the one dummy word line. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012252775(A) 申请公布日期 2012.12.20
申请号 JP20120126809 申请日期 2012.06.04
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JOO SANG-HYUN;SAI KIKAN;KIM MOO-SUNG
分类号 G11C16/02;G11C16/04;G11C16/06 主分类号 G11C16/02
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