发明名称 Triggerable Bidirectional Semiconductor Device
摘要 A triggerable bidirectional semiconductor device has two terminals and at least one gate. The device comprises, within a layer of silicon on insulator, a central semiconductor zone incorporating the at least one gate and comprising a central region having a first conductivity type, two intermediate regions having a second conductivity type respectively arranged on either side of and in contact with the central region, two semiconductor end zones respectively arranged on either side of the central zone, each end zone comprising two end regions having opposite types of conductivity, in contact with the adjacent intermediate region, the two end regions of each end zone being mutually connected electrically in order to form the two terminals of the device.
申请公布号 US2012319204(A1) 申请公布日期 2012.12.20
申请号 US201213523520 申请日期 2012.06.14
申请人 BENOIST THOMAS;GALY PHILIPPE;BOURGEAT JOHAN;JEZEQUEL FRANK;GUITARD NICOLAS;STMICROELECTRONICS SA 发明人 BENOIST THOMAS;GALY PHILIPPE;BOURGEAT JOHAN;JEZEQUEL FRANK;GUITARD NICOLAS
分类号 H01L23/60;H01L27/12 主分类号 H01L23/60
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