发明名称 NANOROD SEMICONDUCTOR DEVICE HAVING A CONTACT STRUCTURE, AND METHOD FOR MANUFACTURING SAME
摘要 Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing the same. The nanorod semiconductor device having a contact structure according to one embodiment of the present disclosure includes: a transparent wafer; a transparent electrode layer formed on the transparent wafer; a nanorod layer including a plurality of semiconductor nanorods doped with dopants having a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with dopants having a second polarity and forming a certain physical contact with the ends of the semiconductor nanorods.
申请公布号 US2012319083(A1) 申请公布日期 2012.12.20
申请号 US201013518238 申请日期 2010.12.21
申请人 LEE SANG WUK;KANG TAE WON;PANIN GENNADY;CHO HAK DONG;DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION F 发明人 LEE SANG WUK;KANG TAE WON;PANIN GENNADY;CHO HAK DONG
分类号 H01L29/38;H01L21/203;H01L21/205;H01L21/208 主分类号 H01L29/38
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