发明名称 |
NANOROD SEMICONDUCTOR DEVICE HAVING A CONTACT STRUCTURE, AND METHOD FOR MANUFACTURING SAME |
摘要 |
Disclosed is a nanorod semiconductor device having a contact structure, and a method for manufacturing the same. The nanorod semiconductor device having a contact structure according to one embodiment of the present disclosure includes: a transparent wafer; a transparent electrode layer formed on the transparent wafer; a nanorod layer including a plurality of semiconductor nanorods doped with dopants having a first polarity and grown on the transparent electrode layer; and a single crystal semiconductor layer doped with dopants having a second polarity and forming a certain physical contact with the ends of the semiconductor nanorods.
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申请公布号 |
US2012319083(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201013518238 |
申请日期 |
2010.12.21 |
申请人 |
LEE SANG WUK;KANG TAE WON;PANIN GENNADY;CHO HAK DONG;DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION F |
发明人 |
LEE SANG WUK;KANG TAE WON;PANIN GENNADY;CHO HAK DONG |
分类号 |
H01L29/38;H01L21/203;H01L21/205;H01L21/208 |
主分类号 |
H01L29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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