DEVICE, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE DEVICE AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR

摘要

A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and aπ-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.