发明名称 |
Phase Change Memory Device |
摘要 |
Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen. |
申请公布号 |
US2012319069(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213584011 |
申请日期 |
2012.08.13 |
申请人 |
PARK YOUNG-LIM;CHO SUNG-LAE;BAE BYOUNG-JAE;LEE JIN-IL;PARK HYE-YOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-LIM;CHO SUNG-LAE;BAE BYOUNG-JAE;LEE JIN-IL;PARK HYE-YOUNG |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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