| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride based LED which is realized by making effective use of a surface of a high defect density part formed in an epitaxial layer corresponding to the stripe core of a substrate, the epitaxial layer being formed on a GaN substrate which is the stripe core substrate. <P>SOLUTION: A plurality of epitaxial layers including an n-type layer, a light-emitting layer and a p-type layer are laminated on a GaN substrate which is a stripe core substrate. The p-type layer includes a high defect density part and a low defect density part whose defect density is lower than that of the high defect density part, with a translucent ohmic electrode layer formed over a section from the high defect density part to the low defect density part of the p-type layer. A bonding pad is formed on part of the translucent ohmic electrode layer, and a current block layer is provided between the translucent ohmic electrode layer and the high defect density part of the p-type layer, the bonding pad being disposed above the current block layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
