| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power module capable of protecting a MOSFET chip and an IGBT chip when a load short circuit occurs, without providing a protection circuit separately. <P>SOLUTION: A power module 22 having a MOSFET chip 11 and an IGBT chip 12 connected in parallel in the same package comprises a gate driver 13 which controls operation of the MOSFET chip 11 and the IGBT chip 12. The MOSFET chip 11 has an electric current sensor which detects electric current flowing through the MOSFET chip 11. When the gate driver 13 determines that load short circuit occurs in the power module 22 on the basis of an electric current value detected by the electric current sensor, the gate driver 13 turns off the IGBT chip 12 and then the MOSFET chip 11. It is characterized that avalanche voltage of the MOSFET chip 11 is lower than the breakdown voltage of the IGBT chip 12. <P>COPYRIGHT: (C)2013,JPO&INPIT |
