| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of screening a semiconductor light-emitting device with low resistance to a forward ESD. <P>SOLUTION: When discharge electric charge related to an ESD is injected to a semiconductor laser device LD, the semiconductor laser device LD generates light responding to the injected electric charge. Since this injected electric charge is discharged from electrostatically accumulated electric charge, the injected electric charge is not controlled with respect to an amount and intensity unlike in a normal operation. On the other hand, a generation condition of a simulation electric signal that can simulate a pulse light output waveform at a saturation ESD voltage is decided, and an electric signal is applied to the semiconductor laser device LD on the basis of this generation condition. The electric signal based on the generation condition reproduces an optical pulse generated in the semiconductor laser device when electrostatic discharge (ESD) is applied to the semiconductor laser device LD in a simulated manner. The generated simulation optical pulse damages defects that are easily broken to cause characteristic change in the semiconductor laser device LD. After the application of the simulation optical pulse, a semiconductor laser device with a low resistance to a forward ESD can be screened. <P>COPYRIGHT: (C)2013,JPO&INPIT |
