SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device, comprising: forming n-channel field-effect transistors on a silicon substrate; forming a first insulating film covering the field-effect transistors; shrinking the first insulating film; forming a second insulating film over the first insulating film; and shrinking the second insulating film, wherein the forming an insulating film covering the field-effect transistors and the shrinking the insulating film are repeated a plurality of time.