| 摘要 |
A semiconductor device production method includes: forming in a silicon substrate first and second region of first and second conductivity type in contact with each other; forming a gate electrode above the first and the second region; forming an insulation film covering part of the gate electrode and part of the second region; forming a source region and a drain region of the second conductivity type; forming interlayer insulation film covering the gate electrode and the insulation film; and forming in the interlayer insulation film first, second and third contact hole reaching the source region, the drain region, and the gate electrode, respectively, and at least one additional hole reaching the insulation film, and forming a conductive film in the first, the second, and the third contact hole and the additional hole to form first, second and third electrically conductive via and electrically conductive member.
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