发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.
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申请公布号 |
US2012319102(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213488879 |
申请日期 |
2012.06.05 |
申请人 |
YAMAZAKI SHUNPEI;HONDA TATSUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;HONDA TATSUYA |
分类号 |
H01L29/786;H01L21/34 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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