发明名称 METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT
摘要 In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.
申请公布号 US2012322186(A1) 申请公布日期 2012.12.20
申请号 US201213598896 申请日期 2012.08.30
申请人 RODE PATRICK;STRASSBURG MARTIN;ENGL KARL;HOEPPEL LUTZ;OSRAM OPTO SEMICONDUCTORS GMBH 发明人 RODE PATRICK;STRASSBURG MARTIN;ENGL KARL;HOEPPEL LUTZ
分类号 H01L33/12;H01L33/00;H01L33/22;H01L33/38 主分类号 H01L33/12
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