发明名称 |
METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT |
摘要 |
In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence. |
申请公布号 |
US2012322186(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213598896 |
申请日期 |
2012.08.30 |
申请人 |
RODE PATRICK;STRASSBURG MARTIN;ENGL KARL;HOEPPEL LUTZ;OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
RODE PATRICK;STRASSBURG MARTIN;ENGL KARL;HOEPPEL LUTZ |
分类号 |
H01L33/12;H01L33/00;H01L33/22;H01L33/38 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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