| 摘要 |
A method of manufacturing a solid-state image sensor, comprising preparing a semiconductor substrate including a photoelectric converter and an insulating film which includes an opening and is formed in a region above the photoelectric converter, depositing a material having a refractive index higher than the insulating film in the opening, and annealing the material deposited in the opening by irradiating the material with one of light and radiation, wherein a light waveguide which is configured to guide an incident light to the photoelectric converter is formed through the depositing and the annealing. |
