SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device comprising : a substrate (101); a carrier transport layer (103), which is composed of a III nitride semiconductor formed on the substrate and transports carriers in the direction along a main surface of the substrate; a barrier layer (104), which is formed on the carrier transport layer, and is composed of a second III nitride semiconductor having a bandgap larger than that of the first III nitride semiconductor; and an electrode (106) formed on the barrier layer. Furthermore, the semiconductor device is also provided with a cap layer (105), which is formed on the barrier layer (104) in the regions to the sides of the electrodes and is composed of a third III nitride semiconductor consisting of a mixture of single crystals and polycrystals.