发明名称 STRONGLY CORRELATED OXIDE FIELD EFFECT ELEMENT
摘要 <p>[Problem] To provide a strongly correlated oxide field effect element that exhibits a switching function with phase transition by electrical means. [Means for solution] Disclosed is a strongly correlated oxide field effect element (100) comprising: a channel layer (2) made of a strongly correlated oxide thin film; a gate electrode (41); a gate insulating layer (31); and a source electrode (42) and a drain electrode (43). The channel layer (2) includes an insulation metal transition layer (22) of strongly correlated oxide and a metal state layer (21) of strongly correlated oxide that are arranged one on top of the other. The thickness (t) of the channel layer (2), the thickness (t1) of the insulation metal transition layer (22), and the thickness (t2) of the metal state layer (21) satisfy the relationship t=t1+t2=t1c>t2c where t1<t1c and t2<t2c, with respect to the critical film thicknesses (t1c) and (t2c) for the metal phases thereof.</p>
申请公布号 WO2012172898(A1) 申请公布日期 2012.12.20
申请号 WO2012JP62173 申请日期 2012.05.11
申请人 FUJI ELECTRIC CO., LTD.;OGIMOTO, YASUSHI 发明人 OGIMOTO, YASUSHI
分类号 H01L49/00;H01L21/336;H01L29/786;H01L45/00 主分类号 H01L49/00
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