发明名称 METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a resist pattern with high resolution can be formed. <P>SOLUTION: The method for forming a resist pattern includes the steps of: (1) forming a resist film on a support body by using a resist composition containing a photo-base generator component and a base material component showing increase in the solubility with an alkali developing solution by an action of an acid; (2) exposing the resist film; (3) baking the film after the step (2) to neutralize a base generating from the photo-base generator component by exposure with an acid that is preliminarily supplied to the resist film in an exposed portion of the resist film and increasing solubility of the base material component with an alkali developing solution by an action of the acid preliminarily supplied to the resist film; and (4) forming a negative resist pattern by developing the resist film with an alkali to dissolve and remove an unexposed portion of the resist film. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012252315(A) 申请公布日期 2012.12.20
申请号 JP20120022408 申请日期 2012.02.03
申请人 TOKYO OHKA KOGYO CO LTD 发明人 YOKOYA JIRO;NAKAMURA TAKESHI;SHIMIZU HIROAKI;TAKESHITA MASARU;NITO TAKEHITO;SAITO HIROKUNI
分类号 G03F7/038;C08F220/10;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/038
代理机构 代理人
主权项
地址