发明名称 |
DOPANT MATERIAL, SEMICONDUCTOR SUBSTRATE, SOLAR CELL ELEMENT, AND PROCESS FOR PRODUCTION OF DOPANT MATERIAL |
摘要 |
A dopant material is disclosed. The dopant material comprises a polycrystalline silicon and a dopant element in the polycrystalline silicon. A concentration of the dopant element is at least 1×1018 atoms/cm3 and no greater than 1×1020 atoms/cm3. A method for producing a dopant material is also disclosed. A fused mixture is generated by mixing and fusing a silicon material with an element that serves as the dopant source. A coagulate of the dopant material is generated by cooling and coagulating the fused mixture. A semiconductor substrate is disclosed. The semiconductor substrate comprises a semiconductor material to which the dopant material is added. A solar cell element comprising the semiconductor substrate, a first electrode, and a second electrode is disclosed. The semiconductor substrate comprises a first surface and a second surface corresponding to a rear surface of the first surface.
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申请公布号 |
US2012318350(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201113580664 |
申请日期 |
2011.02.23 |
申请人 |
SAKAI YOUHEI;KAWAMURA SATOSHI;TAKIMOTO MAYU;KYOCERA CORPORATION |
发明人 |
SAKAI YOUHEI;KAWAMURA SATOSHI;TAKIMOTO MAYU |
分类号 |
H01L29/16;H01L21/22;H01L31/0224 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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