| 摘要 |
A semiconductor memory storage device is disclosed, the memory having a plurality of storage cells. Each storage cell comprises two access control devices, each of the access control devices providing the storage cell with access to or isolation from a respective one of two data lines in response to an access control signal, the two data lines being connected to one data port; access control circuitry for applying the access control signal via one of two access control lines to control a plurality of the access control devices; wherein one of the two access control devices of each storage cell is controlled by the access control signal received from a first of the two access control lines to provide the storage cell with access to or isolation from a first of the two data lines, and one further of the two access control devices is controlled by the access control signal received from a second of the two access control lines to provide the storage cell with access to or isolation from a second of the two data lines. The access control circuitry is responsive to a data access request, the data access request being a write request, to apply a data value to be written to both of the first and second data lines and to apply the access control signal to both of the first and second access control lines. In some cases the access control signal is applied to the second of the two access control lines a predetermined time after it is applied to the first of the two access control lines.
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