THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR

摘要

A thin-film transistor (10) according to the present invention is provided with: a substrate (1); a gate electrode (2) formed on the substrate; a gate insulation film (3) formed on the gate electrode; a crystalline silicon semiconductor layer (4) formed on the gate insulation film (3); an amorphous silicon semiconductor layer (5) formed on the crystalline silicon semiconductor layer; an organic protection film (6) comprising organic material formed on the amorphous silicon semiconductor layer; and a source electrode (8S) and a drain electrode (8D) formed on the amorphous silicon semiconductor layer, with the organic protection film interposed therebetween. The density of negative charge carriers contained in the amorphous silicon semiconductor layer (5) is not less than 3×1011 cm-2.